Broadband transistor-injected dual doping quantum cascade laser

A novel design-friendly device called the transistor-injected dual doping quantum cascade laser (TI-D2QCL) with two different in each stack of a homogeneous superlattice is proposed. By adjusting base-emitter bias Vbe bipolar transistor to supply electrons regions, charge quasi-neutrality can be achieved generate optical transitions cascading stack. These are then stacked and amplified contribute broad flat gain spectrum. Model calculations designed TI- D2QCL show that spectrum ranging from 9.41um 12.01um relative bandwidth 0.24 obtained, indicating pattern may open new pathway appealing applications both MIR THz frequency ranges, wideband generations advanced comb technologies.